Diffraction properties of the nanostructured surface.
Identifieur interne : 000E98 ( Main/Exploration ); précédent : 000E97; suivant : 000E99Diffraction properties of the nanostructured surface.
Auteurs : RBID : pubmed:23421301English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Macromolecular Substances.
- chemistry : Metal Nanoparticles.
- methods : Refractometry.
- ultrastructure : Metal Nanoparticles.
- Light, Materials Testing, Molecular Conformation, Particle Size, Scattering, Radiation, Surface Properties.
Abstract
The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the In2O3 oxide is not only the active component of the structure but also acts as a diffraction cellular element. The oxide surface topology was investigated by means of the atomic-force microscope technique. It was established that the surface topology is caused by the technological conditions of growing In2O3 oxides. Under different conditions of oxidation the sample surfaces had contained nanoformations preferably in the form of nanoneedles. Their location has both a disordered and ordered character. The sizes, form and density of the nanoneedles are different, too. A dimensional optical effect in the oxide was found to be due to the anisotropic light absorption in InSe. The higher deviation of incident light from its normal direction due to a nanostructured surface is the higher variation in the generation of carriers in the semiconductor is. These changes consist in the energy broadening of the heterostructure photoresponse spectrum as well in peculiarities of the excitonic line. The higher density and ordering of the nanoneedles on the oxide surface is the higher long-wave shift and more intensive excitonic peak in spectrum takes place.
PubMed: 23421301
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Le document en format XML
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<author><name sortKey="Katerynchuk, V M" uniqKey="Katerynchuk V">V M Katerynchuk</name>
<affiliation wicri:level="1"><nlm:affiliation>Chernivtsi Department of the I.M. Frantsevych Institute of Materials Science Problems, The National Academy of Sciences of Ukraine, 5, Iryna Vilde St., 58001 Chernivtsi, Ukraine.</nlm:affiliation>
<country xml:lang="fr">Ukraine</country>
<wicri:regionArea>Chernivtsi Department of the I.M. Frantsevych Institute of Materials Science Problems, The National Academy of Sciences of Ukraine, 5, Iryna Vilde St., 58001 Chernivtsi</wicri:regionArea>
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</author>
<author><name sortKey="Kovalyuk, Z D" uniqKey="Kovalyuk Z">Z D Kovalyuk</name>
</author>
<author><name sortKey="Savchuk, A I" uniqKey="Savchuk A">A I Savchuk</name>
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<publicationStmt><date when="2012">2012</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Indium (chemistry)</term>
<term>Light</term>
<term>Macromolecular Substances (chemistry)</term>
<term>Materials Testing</term>
<term>Metal Nanoparticles (chemistry)</term>
<term>Metal Nanoparticles (ultrastructure)</term>
<term>Molecular Conformation</term>
<term>Particle Size</term>
<term>Refractometry (methods)</term>
<term>Scattering, Radiation</term>
<term>Surface Properties</term>
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<keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term>
<term>Macromolecular Substances</term>
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<keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Metal Nanoparticles</term>
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<front><div type="abstract" xml:lang="en">The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the In2O3 oxide is not only the active component of the structure but also acts as a diffraction cellular element. The oxide surface topology was investigated by means of the atomic-force microscope technique. It was established that the surface topology is caused by the technological conditions of growing In2O3 oxides. Under different conditions of oxidation the sample surfaces had contained nanoformations preferably in the form of nanoneedles. Their location has both a disordered and ordered character. The sizes, form and density of the nanoneedles are different, too. A dimensional optical effect in the oxide was found to be due to the anisotropic light absorption in InSe. The higher deviation of incident light from its normal direction due to a nanostructured surface is the higher variation in the generation of carriers in the semiconductor is. These changes consist in the energy broadening of the heterostructure photoresponse spectrum as well in peculiarities of the excitonic line. The higher density and ordering of the nanoneedles on the oxide surface is the higher long-wave shift and more intensive excitonic peak in spectrum takes place.</div>
</front>
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<PubDate><Year>2012</Year>
<Month>Nov</Month>
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<Title>Journal of nanoscience and nanotechnology</Title>
<ISOAbbreviation>J Nanosci Nanotechnol</ISOAbbreviation>
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<ArticleTitle>Diffraction properties of the nanostructured surface.</ArticleTitle>
<Pagination><MedlinePgn>8856-9</MedlinePgn>
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<Abstract><AbstractText>The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be essentially dependent on surface topology of the oxide. The obtained results indicate that the In2O3 oxide is not only the active component of the structure but also acts as a diffraction cellular element. The oxide surface topology was investigated by means of the atomic-force microscope technique. It was established that the surface topology is caused by the technological conditions of growing In2O3 oxides. Under different conditions of oxidation the sample surfaces had contained nanoformations preferably in the form of nanoneedles. Their location has both a disordered and ordered character. The sizes, form and density of the nanoneedles are different, too. A dimensional optical effect in the oxide was found to be due to the anisotropic light absorption in InSe. The higher deviation of incident light from its normal direction due to a nanostructured surface is the higher variation in the generation of carriers in the semiconductor is. These changes consist in the energy broadening of the heterostructure photoresponse spectrum as well in peculiarities of the excitonic line. The higher density and ordering of the nanoneedles on the oxide surface is the higher long-wave shift and more intensive excitonic peak in spectrum takes place.</AbstractText>
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